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Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces

Published online by Cambridge University Press:  15 February 2011

C. H. Bjorkman ,
H. Nishimura ,
T. Yamazaki ,
J. L. Alay ,
M. Fukuda  and
M. Hirose
C. H. Bjorkman
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724
H. Nishimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
T. Yamazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
J. L. Alay
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724
M. Fukuda
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
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Abstract

Surface contamination and chemical stability of hydrogen terminated Si(100) surfaces have been studied using Fourier Transform Infrared Attenuated Total Reflection (FT-IR-ATR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Hydrogen terminated Si(100) is obtained by removing the chemical oxide, formed in a low-concentration-NH4OH SC1 clean, in various HF based solutions. Using standard cleaning and loading conditions, we find a direct correlation between surface roughness and the amount of adsorbed C contamination. Oxidation during water rinsing and wafer loading observed by both FT-IR-ATR and XPS indicates that dihydride terminated silicon atoms are preferentially oxidized. Optimizing the water rinse and wafer loading conditions reduces total atomic concentration of C, O, and F surface contamination from 20–30 at.% to less than 6 at.%. These clean surfaces enable XPS-identification of the Si-Hx components of the Si 2p core-level spectra as well as estimation of the relative surface concentration of Si-Hx and contamination species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 177
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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