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Charging Model of a Si Nanocrystal-based Floating Gate in a Quantum Flash Memory

Published online by Cambridge University Press:  01 February 2011

Bertrand Leriche ,
Yann Leroy  and
Anne-Sophie Cordan
Bertrand Leriche
Affiliation:
[email protected], ENSPS, InESS Bd Sébastien Brant, BP 10413, ILLKIRCH F67412, France
Yann Leroy
Affiliation:
[email protected], ENSPS, InESS, Bd Sébastien Brant, BP 10413, ILLKIRCH, F67412, France
Anne-Sophie Cordan
Affiliation:
[email protected], ENSPS, InESS, Bd Sébastien Brant, BP 10413, ILLKIRCH, F67412, France
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Abstract

We propose a theoretical study for charging the floating gate composed of Si nanocrystals (NCs), in a non-volatile flash memory. Only a few electrons tunnel from the channel of a metal-oxide-semiconductor transistor into the two-dimensional array of nanocrystals.

Our model is based on the geometrical and physical properties of the device, in order to take the dispersion of the relevant parameters into account: NC radii, inter-NC distances, tunnel oxide and gate oxide thicknesses. The energy subbands of the channel are explicitly included, together with the doping density.

This three-dimensional model of electron tunneling into a NC is numerically solved through a two-dimensional finite element approach, which allows extensive numerical experimentations.

The tunneling times to charge a single NC or the whole NC floating gate are evaluated in a finer detail, and the influence of the dispersion of the relevant parameters is discussed.

Such a study may help the experimentalists to build efficient quantum flash memories.

Keywords

simulationnanostructurememory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I02-08
Copyright
Copyright © Materials Research Society 2007

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