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Characterization of SiGe Epitaxial Films Using Ellipsometry and X-Ray Fluorescence

Published online by Cambridge University Press:  25 February 2011

L.V. Munukutla ,
K. Evans  and
M.H. Liaw
L.V. Munukutla
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287–6606
K. Evans
Affiliation:
Motorola Inc., 5005 East McDowell Road, Phoenix, AZ 85008
M.H. Liaw
Affiliation:
Motorola Inc., 5005 East McDowell Road, Phoenix, AZ 85008
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Abstract

Ellipsometry in combination with X-ray fluorescence spectroscopy is demonstrated as a suitable technique to characterize SiGe thin films (180–800 Å) rapidly and nondestructively. Film thickness values extracted from ellipsometry are in agreement with the measurements obtained using other techniques such as TEM, SIMS, and RBS. The measured Ge concentration obtained by direct excitation of X-rays in several SiGe films ranging from 6 to 20 atomic percent, shows good correlation with the values obtained using RBS and SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

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