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Characterization Of sic Layer Formed by C Ion Implantation ( ESR And IR Studies)

Published online by Cambridge University Press:  21 February 2011

Y. Show ,
T. Izumi ,
M. Deguchi ,
M. Kitabatake  and
T. Hirao
Y. Show
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
T. Izumi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
M. Deguchi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
M. Kitabatake
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
T. Hirao
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, Japan
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Abstract

Characterization of C ion implanted silicon layers were performed by fourier transformation infrared ( FT-IR ) spectroscopy and electron spin resonance ( ESR ) methods. Microcrystalline β-SiC including amorphous Si are formed in the Si surface region by annealing at 1200 °C following hot ( 450 °C ) implantation. The ESR analysis revealed the presence of two kinds of defect centers in SiC layer formed by implantation, i.e. Si dangling bond ( g=2.0060, ΔHpp=6 Oe) in the amorphous Si and Si dangling bond with C atom neighbors ( g=2.0032, ΔHpp=3 Oe). Heating substrate during implantation prevents the formation of carbon clusters on the Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 723
Copyright
Copyright © Materials Research Society 1994

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References

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