Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:56:24.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

Published online by Cambridge University Press:  11 February 2011

Filippos Papadatos ,
Spyridon Skordas ,
Steve Consiglio ,
Alain E. Kaloyeros  and
Eric Eisenbraun
Filippos Papadatos
Affiliation:
University at Albany Institute for Materials and School of NanoSciences and NanoEngineering Albany, NY 12203, U.S.A.
Spyridon Skordas
Affiliation:
University at Albany Institute for Materials and School of NanoSciences and NanoEngineering Albany, NY 12203, U.S.A.
Steve Consiglio
Affiliation:
University at Albany Institute for Materials and School of NanoSciences and NanoEngineering Albany, NY 12203, U.S.A.
Alain E. Kaloyeros
Affiliation:
University at Albany Institute for Materials and School of NanoSciences and NanoEngineering Albany, NY 12203, U.S.A.
Eric Eisenbraun
Affiliation:
University at Albany Institute for Materials and School of NanoSciences and NanoEngineering Albany, NY 12203, U.S.A.
Get access

Abstract

This study describes work carried out to date involving evaluation of the chemical, structural, and electrical performance of ruthenium (Ru) and ruthenium oxide (RuO2) films grown on SiO2 substrates employing metal organic chemical vapor deposition (MOCVD). Diethyl ruthenocene and oxygen were employed as reactant gases for this work, which was carried out using a 200mm wafer cluster tool. The films were characterized using cross-sectional scanning electron microscopy (CS-SEM), four-point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Capacitance-voltage (C-V) measurements were also carried out to assess the work function of the deposited films. It was determined that both Ru and RuO2 phases possess near-bulk resistivity and low contamination levels. Importantly, it was observed that the film stoichiometry could be modulated by controlled changes of the processing conditions, and that pure Ru and RuO2 films can be deposited in an oxygen ambient. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients, and it was found that the film stability is dependent upon both the deposited phase and the annealing ambient. Results of PMOS gate electrode performance testing of CVD Ru films, has been carried out, and the results are similar to those previously reported for ruthenium-based films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N3.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhong, H., Heuss, G., and Misra, V. IEEE Electron Device Lett. 21, 593 (2000).Google Scholar
2. Zhong, H., Heuss, G., and Misra, V., Luan, H., Lee, C., and Kwong, D., Appl. Phys. Lett. 78, 1134 (2001).Google Scholar
3. Takagi, T., Ichizo K., I. O. and Okada, M., Jpn. J. Appl. Phys, 34, 4103 (1995).Google Scholar
4. Hartmann, A. J. et al Appl. Phys A, 70, 293 (2000).Google Scholar
5. Wilk, G. D., Wallace, R. M., Anthony, J. M., J. Appl. Phys., 89, 5243–5275 (2001).Google Scholar
6. Meng, L., Santos, M. P., Appl. Surf. Sci. 147, 94 (1999).Google Scholar
7. Papadatos, F., Skordas, S., Patel, Z., Consiglio, S., and Eisenbraun, E., in Silicon Materials Processing-Characterization and Reliability, edited by Veteran, J., O'Meara, D.L., Misra, V., and Ho, P., (Mater. Res. Soc. Proc. 716, San Francisco, CA, 2002) pp. 79–84.Google Scholar
8. Madhavaram, H., Idriss, H., Wendt, S., Kim, Y. D., Knapp, M., Over, H., Assmann, J., Loffler, E. L. and Muhle, M., J. Catal. 10, 1006 (2001).Google Scholar
9. Nicollian, E.H,. and Brews, J.R, MOS Physics and Technology, (John Wiley & Sons, New York, 1982), p. 469.Google Scholar