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Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

Published online by Cambridge University Press:  28 February 2011

David Hodul David Hodul  and
Sandeep Mehta Sandeep Mehta
David Hodul David Hodul
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303Varian Extrion Division, Blackburn Industrial Park, Gloucester, MA 01930
Sandeep Mehta Sandeep Mehta
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303Varian Extrion Division, Blackburn Industrial Park, Gloucester, MA 01930
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Abstract

Sputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 183
Copyright
Copyright © Materials Research Society 1987

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