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Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

Published online by Cambridge University Press:  21 February 2011

P.K. Vasudev  and
D.C. Mayer
P.K. Vasudev
Affiliation:
Hughes Research Laboratories Malibu, CA
D.C. Mayer
Affiliation:
Hughes Research Laboratories Malibu, CA
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Abstract

Complementary Metal-Oxide-Semiconductor (CMOS) devices and circuits with minimum feature sizes of about 1 μm were fabricated in 0.5-μm-thick epitaxial Silicon-On-Sapphire (SOS) films. The films were modified by ion implantation and subsequent solid phase recrystallization processes which reduced the total microtwin concentrations in the Si layers by more than a hundredfold, while increasing electron and hole channel mobilities between 40 to 50%. Leakage currents were reduced by over 2 orders of magnitude, while drive currents and subthreshold slopes showed significant improvements over as–grown SOS films. Propagation delays of less than 80 psec were obtained for CMOS/SOS inverters with Leff = 0.6 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 35
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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