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Characterization and Monitoring of Silicon-on-Insulator Fabrication Processes by High-Resolution X-ray Diffraction

Published online by Cambridge University Press:  01 February 2011

G. M. Cohen ,
P.M. Mooney ,
H. Park ,
C. Cabral  and
E.C. Jones
G. M. Cohen
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A
P.M. Mooney
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A
H. Park
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A
C. Cabral
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A
E.C. Jones
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A
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Abstract

High-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafers. We show the usefulness of this technique for the characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for CMOS fabrication on SOI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C2.4
Copyright
Copyright © Materials Research Society 2002

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References

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