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Characteristics of XeCI Excimer-Laser Annealed Insulator

Published online by Cambridge University Press:  10 February 2011

Keun-Ho Jang ,
Hong-Seok Choi ,
Jae-Hong Jun ,
Jhun-Suk Yoo  and
Minkoo Han
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jae-Hong Jun
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jhun-Suk Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Minkoo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon ) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased upto the 170 mJ/cm2 with increasing laser energy density and decreased at 220 mJ/cm2. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 115
Copyright
Copyright © Materials Research Society 1997

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References

1. Shimizu, K., Sugiura, O., and Matsumura, M., Jpn. J. Appl. Phys. 29, L1775 (1990).Google Scholar
2. Slaoui, A., Foulon, F., and Siffert, P., J. Appl. Phys. 67, 6197 (1990).Google Scholar
3. Brodie, I., and Richard, P., Proceedings of the IEEE 82, 1006 (1994).Google Scholar