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Characteristics of Thin Layers of SiO2 Fabricated by Rapid Thermal Oxidation

Published online by Cambridge University Press:  28 February 2011

S. Prasad ,
J. Haase ,
R. Früchtnicht ,
R. Ferretti  and
D. Haack
S. Prasad
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik,Appelstrasse 11A, D-3000 Hannover, West Germany
J. Haase
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik,Appelstrasse 11A, D-3000 Hannover, West Germany
R. Früchtnicht
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik,Appelstrasse 11A, D-3000 Hannover, West Germany
R. Ferretti
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik,Appelstrasse 11A, D-3000 Hannover, West Germany
D. Haack
Affiliation:
Robert-Bosch-Gmbh, Reutlingen, West Germany
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Abstract

Thin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference between metal and semiconductor depends upon technology and can be attributed to the changes in Si-SiO2 barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 109
Copyright
Copyright © Materials Research Society 1987

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References

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