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Characteristics of Cu-Pd Films Grown by Simultaneous Chemical Vapor Deposition from Metalorganic Precursors

Published online by Cambridge University Press:  15 February 2011

V. Bhaskaran ,
P. Atanasova ,
M. J. Hampden-Smith  and
T. T. Kodas
V. Bhaskaran
Affiliation:
Departments of Chemical & Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131
P. Atanasova
Affiliation:
Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
M. J. Hampden-Smith
Affiliation:
Chemistry, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
T. T. Kodas
Affiliation:
Departments of Chemical & Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
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Abstract

The strategy of adding alloying elements during the chemical vapor deposition (CVD) of copper to improve the reliability of copper films was investigated. Deposition of Cu-Pd alloy films was demonstrated using low-pressure CVD with (hexafluoroacetylacetonato)- copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)vtms] and palladium(II)bis(hexafluoroacetyl- acetonate) [Pd(hfac)2] in the temperature range of 100-200 ° C in a cold-wall differential reactor. High growth rates of 100-500 nm/min and high-purity films as confirmed by Auger electron spectroscopy (AES) were obtained. As-deposited alloy films showed low resistivities (˜ 2.3 μΩcm) at palladium concentrations below 3 wt. %. A high degree of conformality was observed on sub-half-micron trenches with aspect ratios greater than 3.5:1. The co-deposition of copper and palladium resulted in significant inhibition of palladium growth as compared to the independent palladium deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 231
Copyright
Copyright © Materials Research Society 1996

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