Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:34:38.147Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of All-Omcvd Grown GaAs Mesfets on Si Substrates

Published online by Cambridge University Press:  28 February 2011

Jhang Woo Lee ,
R. E. McCullough  and
R. H. Morrison
Jhang Woo Lee
Affiliation:
Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780
R. E. McCullough
Affiliation:
Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780
R. H. Morrison
Affiliation:
Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780
Get access

Abstract

We present DC characteristics of all-OMCVD grown GaAs MESFET structures on Si substrates with unintentionally doped GaAs or AlGaAs buffer layers. MESFETs fabricated in two and three inch GaAs on Si wafers pinch off well and exhibit reasonably high transconductances up to 110 mS/mm for 1 µm gate devices. The reverse Schottky breakdown voltage of the MESFET gate is as high as 15 V and the forward turn on voltage is ~0.65 V. The ohmic isolation is comparable to the typical homoepitaxial layer with a leakage current of 100 nA at a I V bias. The low background doping levels of unintentionally doped GaAs buffer layers is the key factor for this successful MESFET operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 193
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Metze, G. M., Choi, H. K., and Tsaur, B-Y., Appl. Phys. Lett. 45(10)), 1107 (1984).Google Scholar
2 Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminish, K., Jpn. J. Appl. Phys. 23 (12), L919 (1984).Google Scholar
3 Fisher, R., Chand, N., Kopp, W., Peng, C. K., Morkoc, H., Gleason, K. R., and Scheitlin, D., IEEE Trans.on Electron Dev. ED–33, 206 (1986).Google Scholar
4 Shichijo, H. and Lee, J. W., in Heteroepitaxy on Silicon1, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA, (1986) p. 173.Google Scholar
5 Shichijo, H., Lee, J. W., McLevige, W. V., and Taddiken, A. H., IEEE Electron Dev. Lett. EDL–8 (3), 121 (1987).CrossRefGoogle Scholar
6 Eron, M., Tayor, C., Menna, R., Narayan, S. Y., and Klatskin, J., IEEE Electron Dev. Lett. EDL–8 (8), 350 (1987).Google Scholar
7 Soga, T., Hattory, S., Sakai, S., Takeyasu, M., and Umeno, M., J. Crystal Growth, 77, 498 (1986).Google Scholar
8 Lee, J. W., in GaAs and Related Compounds 1986, edited by Lindley, W. T. (Institute of Physics, Bristol) p.111.Google Scholar
9 unpublished data.Google Scholar
10 will be published by the same group as in Reference 6.Google Scholar