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Characterisation of Low-K Dielectric Films by Ellipsometric Porosimetry

Published online by Cambridge University Press:  17 March 2011

M.R. Baklanov  and
K.P. Mogilnikov
M.R. Baklanov
Affiliation:
IMEC, B-3001 Leuven, Belgium, [email protected]
K.P. Mogilnikov
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisrk, Russia
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Abstract

Ellipsometric porosimetry (EP) is a simple and effective method for the characterization of the porosity (volume of both open and close pores), average pore size, specific surface area and pore size distribution (PSD) in thin porous films deposited on top of any smooth solid substrat e. Because a laser probe is used, small surface area can be analyzed. Therefore, EP can be used on patterned wafers and it is compatible with microelectronic technology. This method is a new version of adsorption (BET) porosimetry. In situ ellipsometry is used to determine the amount of adsorptive which adsorbed/condensed in the film. Change in refractive index is used to calculate of the quantity of adsorptive present in the film. EP also allows the study of thermal stability, adsorption and swelling properties of low-K dielectric films. Room temperature EP based on the adsorption of vapor of some suitable organic solvents and method of calculation of porosity and PSD is discussed. Examination of the validity of Gurvitsch rule for various organic adsorptives (toluene, heptane, carbon tetrachloride and isopropyl alcohol) has been carried out to assess the reliability of measurements of pore size distribution by the ellipsometric porosimetry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D4.2.1
Copyright
Copyright © Materials Research Society 2000

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