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Cathodoluminescence Spectroscopy of Boron Nitride Films

Published online by Cambridge University Press:  21 February 2011

C. A. Taylor II ,
S. W. Brown ,
V. Subramaniam ,
S. Kidner ,
S. C. Rand  and
R. Clarke
C. A. Taylor II
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
S. W. Brown
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
V. Subramaniam
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
S. Kidner
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
S. C. Rand
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
R. Clarke
Affiliation:
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109–1120
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Abstract

We report results from cathodoluminescence spectroscopy of boron nitride films grown on Si (100) substrates by ECR ion source assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-bandgap region for hexagonal boron nitride films at energies of 4.90 eV, 5.31 eV, and 5.50 eV. In addition, deep-level emission spectra of predominantly cubic boron nitride films are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 339
Copyright
Copyright © Materials Research Society 1994

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References

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