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The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

Published online by Cambridge University Press:  01 February 2011

Bartek Pawlak
Affiliation:
[email protected], Philips Research Europe, Front-End CMOS, Kapeldreef 75, Leuven, N/A, B-3001, Belgium, 32-16-281060, 32-16-281706
Ray Duffy
Affiliation:
[email protected], Philips Research Europe, Leuven, N/A, B-3001, Belgium
Emmanuel Augendre
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Simone Severi
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Philippe Absil
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Erik Collart
Affiliation:
[email protected], AMAT, Horsham, N/A, RH13 5PX, United Kingdom
Susan Felch
Affiliation:
[email protected], AMAT, Sunnyvale, CA 94085, United States
Robert Schreutelkamp
Affiliation:
[email protected], AMAT, Leuven, N/A, B-3001, Belgium
Nick Cowern
Affiliation:
[email protected], University of Surrey, Surrey, N/A, GU2 7XH, United Kingdom
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Abstract

As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ruffell, S., Mitchell, I. V., and Simpson, P. J., J. Appl. Phys. 97, 123518 (2005).Google Scholar
[2] Collart, E. J. H., Felch, S. B., Pawlak, B. J., Absil, P. P., Severi, S., Janssens, T., and Vandervorst, W., J. Vac. Sci. Technol. B 24, 507 (2006).Google Scholar
[3] Pawlak, B. J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S., Collart, E., Cowern, N. E. B., submitted to Appl. Phys. Lett.Google Scholar