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C49-TiSi2 Epitaxial Orientation Dependence of the C49-to-C54 Phase Transformation Rate

Published online by Cambridge University Press:  10 February 2011

T. Nakamura ,
K. Ikeda ,
H. Tomita ,
S. Komiya  and
K. Nakajima
T. Nakamura
Affiliation:
Fujitsu Laboratories Ltd., Atsugi, 243-01 Japan, tnakamu@ccg. flab. fujitsu.co.jp
K. Ikeda
Affiliation:
Fujitsu Laboratories Ltd., Atsugi, 243-01 Japan, tnakamu@ccg. flab. fujitsu.co.jp
H. Tomita
Affiliation:
Fujitsu Laboratories Ltd., Atsugi, 243-01 Japan, tnakamu@ccg. flab. fujitsu.co.jp
S. Komiya
Affiliation:
Fujitsu Laboratories Ltd., Atsugi, 243-01 Japan, tnakamu@ccg. flab. fujitsu.co.jp
K. Nakajima
Affiliation:
Fujitsu Laboratories Ltd., Atsugi, 243-01 Japan, tnakamu@ccg. flab. fujitsu.co.jp
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Abstract

Effects of the C49-TiSi2 epitaxial orientation on the C49-to-C54 phase transformation rate have been studied for samples with different pre-amorphization implantation (PAI) conditions. The C49 epitaxial orientation to the Si(001) substrate is characterized by use of grazing-incidence X-ray diffraction (GIXD) measurements. We found that the PAl treatment suppresses the epitaxial growth of C49-TiSi2 on Si(001) substrates and the poorer orientational alignment of C49-TiSi2 causes a more rapid transformation to C54-TiSi2. We believe this suppression of epitaxial alignment is a possible mechanism to understand the effect of the PAl treatment on the C49-C54 transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 213
Copyright
Copyright © Materials Research Society 1998

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References

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