Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-17T18:03:51.713Z Has data issue: false hasContentIssue false
  • English
  • Français

Buried Schottky Contacts in Patterned Cobalt Silicide Layers in Silicon Using Wafer Bonding

Published online by Cambridge University Press:  25 February 2011

GöRan ThungströM ,
Christer FröJdh  and
C. Sture Petersson
GöRan ThungströM
Affiliation:
Royal Institute of Technology, Dept. of Solid State Electronics, Electrum 229, S-164 40 Kista, Sweden Also: Mid-Sweden University, Dept. of Electronics, S-851 70 Sundsvall, Sweden
Christer FröJdh
Affiliation:
Royal Institute of Technology, Dept. of Solid State Electronics, Electrum 229, S-164 40 Kista, Sweden Also: Mid-Sweden University, Dept. of Electronics, S-851 70 Sundsvall, Sweden
C. Sture Petersson
Affiliation:
Royal Institute of Technology, Dept. of Solid State Electronics, Electrum 229, S-164 40 Kista, Sweden
Get access

Abstract

We have fabricated buried cobaltdisilicide schottky contacts in silicon using wafer bonding with a patterned metal layer. The schottky contacts show good rectifying behaviour with ideality factors of 1.02-1.09 and low reverse leakage currents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 475
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lasky, J.B., Appl. Phys. Lett. 48 (1) p.78 (1986)Google Scholar
2 Nayak, D., Reisman, A. and Turlik, I., J. Electrochem. Soc. 135 (4) p. 1023 (1988)Google Scholar
3 Ljungberg, K., Söderbärg, A., Thungstrôm, G. and Petersson, C.S., in Semiconductor Wafer bonding: Science, Technology, and Applications (Proceedings of second international symposium 93-29 The Electrochem. Soc. 1993) p.249 Google Scholar
4 Ismail, M.S. and Bower, R.B., Electronic Lett. 27 (2) p.1153 (1991)Google Scholar
5 Cheung, S.K. and Cheung, N.W., Appl. Phys. Lett 49 (2) p.85 (1986)CrossRefGoogle Scholar
6 Schroder, D.K., Semicoductor Material and Device Characterization (John Wiley & Sons, Inc., New York, 1990) p. 149–153 Google Scholar