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The Behavior of Steps on Vicinal Si(001) and Ge(001)

Published online by Cambridge University Press:  28 February 2011

J. E. Griffith ,
J. A. Kubby ,
P. E. Wierenga  and
G. P. Kochanski
J. E. Griffith
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. A. Kubby
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
P. E. Wierenga
Affiliation:
Philips Research Laboratories, Eindoven, The Netherlands
G. P. Kochanski
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Tunneling images of vicinal Si(001) and Ge(001) cut with a tilt about [110] are presented. Si(001) samples cut with a 4· tilt exhibit double steps with many kinks and point defects, while 2· Ge(001) samples exhibit only monoatomic steps. The behavior of the steps is essentially described by a model due to Chadi. The procedure used to clean the surface can have a strong influence on the spacing of the steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 27
Copyright
Copyright © Materials Research Society 1988

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