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Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy

Published online by Cambridge University Press:  01 February 2011

Kenta Arima ,
Hideyuki Hara ,
Yasuhisa Sano ,
Keita Yagi ,
Ryota Okamoto ,
Junji Murata ,
Hidekazu Mimura  and
Kazuto Yamauchi
Kenta Arima
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan, +81-6-6879-7274, +81-6-6879-7272
Hideyuki Hara
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Yasuhisa Sano
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Keita Yagi
Affiliation:
[email protected], Osaka University, Research Center for Ultra-Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Ryota Okamoto
Affiliation:
[email protected], Osaka University, Research Center for Ultra-Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Junji Murata
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Hidekazu Mimura
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Kazuto Yamauchi
Affiliation:
[email protected], Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
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Abstract

Scanning tunneling microscopy (STM) observations are performed on 4H-SiC(0001) surfaces after wet-chemical preparation steps including HF treatments.1×1 structures are formed on a terrace together with other local structures.Their atomic images are investigated in conjunction with low-energy electron diffraction and electron spectroscopy for chemical analysis.It is suggested that each bright dot forming the 1×1 phase corresponds to an OH-terminated Si atom.

Keywords

scanning probe microscopy (SPM)passivationsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-06
Copyright
Copyright © Materials Research Society 2007

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