Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-20T13:39:43.241Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Layer CVD for Continuously Shrinking Devices

Published online by Cambridge University Press:  17 March 2011

Suvi Haukka ,
Kai-Erik Elers  and
Marko Tuominen
Suvi Haukka
Affiliation:
ASM Microchemistry Ltd., Kutojantie 2B, P.O. Box 132, FIN-02631 Espoo, Finland
Kai-Erik Elers
Affiliation:
ASM Microchemistry Ltd., Kutojantie 2B, P.O. Box 132, FIN-02631 Espoo, Finland
Marko Tuominen
Affiliation:
ASM Microchemistry Ltd., Kutojantie 2B, P.O. Box 132, FIN-02631 Espoo, Finland
Get access

Abstract

This paper will review the basics of the atomic layer chemical vapor deposition (ALCVD) thin film growth technique. The emphasis is on the ALCVD metal nitride growth and dual damascene barrier requirements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D6.4.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Suntola, T., Atomic Layer Epitaxy, in: Handbook of Crystal Growth 3, Thin Films and Epitaxy, Part B: Growth Mechanisms and Dynamics, Chapter 14, Elsevier, (1994).Google Scholar
2. Haukka, S. and Suntola, T., Interface Sci., 5, 119 (1997).10.1023/A:1008601024870Google Scholar
3. Haukka, S., Lakomaa, E.-L. and Suntola, T., Stud. Surf. Sci. Catal. 120, 715 (1998).10.1016/S0167-2991(99)80570-9Google Scholar
4. Haukka, S., Tuominen, M. and Ernst Granneman, paper presented in High-k Dielectrics Session organized by Semieducation on the 5th of April, 2000 in Munchen.Google Scholar
5. Puurunen, R. L., Root, A., Haukka, S., Iiskola, E. I., Lindblad, Marina and Krause, A. O. I., J. Phys. Chem, in press.Google Scholar
6. Ritala, M. and Leskelä, M. J. Phys. IV, 5, C5–937 (1995).Google Scholar
7. Min, J. S., Son, Y.-W., Kang, W.-G., Chun, S.-S. and Kang, S.-W., Jpn. J. Appl. Phys. 37, 4999 (1998).10.1143/JJAP.37.4999Google Scholar
8. Ritala, M., Kalsi, P., Riihelä, D., Kukli, K., Leskelä, M and Jokinen, J., Chem. Mater. 11, 1712 (1999).10.1021/cm980760xGoogle Scholar
9. Ritala, M., Leskelä, M., Rauhala, E. and Jokinen, J., J. Electrochem. Soc., 145, 2914 (1998).10.1149/1.1838736Google Scholar
10. Ritala, M., Leskelä, M., Rauhala, E. and Haussalo, P., J. Electrochem. Soc. 142 2731 (1995).10.1149/1.2050083Google Scholar
11. Elers, K.-E., Saanila, V., Soininen, P. and Haukka, S., unpublished results.Google Scholar
12. Satta, A., Beyer, G., Maex, K., Elers, K.-E., Haukka, S. and Vantomme, A., submitted to MRS Symp. Vol. 612.Google Scholar
13. Iiskola, E., personal communication.Google Scholar
14. Ritala, M., Leskelä, M., Dekker, J.-P., Mutsaers, C., Soininen, P. J. and Skarp, J., Chem. Vap. Deposition, 5, 7 (1999).10.1002/(SICI)1521-3862(199901)5:1<7::AID-CVDE7>3.0.CO;2-J3.0.CO;2-J>Google Scholar