Precise determination of the Ge outdiffusion into the Si cap in strained Si/SiGe structures and the depth distribution of dopants have been critical to the industry and a challenge to the SIMS community. Will the rough cross-hatch surface topography degrade the SIMS depth resolution, or alter the accuracy of the depth profile?

Here we report on a novel AFM approach to show that the SIMS measurement process results in conformal sputtering. Therefore, maintaining excellent depth resolution and the depth distribution accuracy capabilities of SIMS for these material systems.