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Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

W. -X. Ni ,
A. Henry ,
J. O. Ekberg  and
G. V. Hansson
W. -X. Ni
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
A. Henry
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
J. O. Ekberg
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
G. V. Hansson
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
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Abstract

Silicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 97
Copyright
Copyright © Materials Research Society 1991

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References

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