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Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

W. -X. Ni ,
A. Henry ,
J. O. Ekberg  and
G. V. Hansson
W. -X. Ni
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
A. Henry
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
J. O. Ekberg
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
G. V. Hansson
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden.
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Abstract

Silicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 97
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Ni, W. -X., Knall, J., Hasan, M. -A., Hansson, G. V., Sundgren, J. -E., Bamett, S. A., Markert, L. C., and Greene, J.E.. Phys. Rev. B40, 10449 (1989).Google Scholar
[2] Tabe, M.. J. Vac. Sci. Technol. B3, 975 (1985).Google Scholar
[3] Hasan, M. -A., Knall, J., Barnett, S. A., Sundgren, J. -E., Markert, L. C., Rockett, A., and Greene, J. E.. J. Appl. Phys. 65, 172 (1989).Google Scholar
[4] Henry, A., Ni, W. -X., Hasan, M. -A., Hansson, G. V., and Monemar, B.. Semlcond. Sci. Technol. 5, 340 (1990).Google Scholar
[5] Llghtowlers, E. C., Semlcond. Sci. Technol. 5, 1161 (1990).Google Scholar
[6] Rowell, N. L., Houghton, D. C., Noel, J. -P., and Greene, J. E.. Thin Solid Films IM. 69 (1990).Google Scholar
[7] Wolf, H. F., In Silicon Semiconductor Data. (Signetics Corporation. New York) 1969.Google Scholar
[8] Willander, M., Shen, G. D., Xu, D. -X., and Ni, W. -X.. J. Appl. Phys. 63, 5036 (1988).Google Scholar
[9] Xu, D. -X., Shen, G. D., Willander, M., Ni, W. -X., and Hansson, G. V.. Appl. Phys. Lett. 26, 2239 (1988).Google Scholar
[10] Xu, D. -X., Shen, G. D., Willander, M., and Hansson, G. V., J. Electronic Materials 26, 1033 (1990).Google Scholar
[11] Kuno, H. J.. IEEE Trans. Electron Dev. ED-11, 8 (1964).Google Scholar
[12] Johansson, H., Rudner, S., Xu, D. -X., and Willander, M., in Proc. of 13th Nordic Semiconductor Meeting, edited by ösulng, M. (Saltsjõbaden. 1988) P. 273.Google Scholar