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Anomalous Selective Tungsten- Growth by -Chemical- Vapor -Deposition

Published online by Cambridge University Press:  15 February 2011

Yu-Jane Mei ,
Ting-Chang Chang ,
Jeng-Dong Sheu ,
Wen-Kuan Yeh ,
Fu-Ming Pan  and
Chun-Yen Chang
Yu-Jane Mei
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Ting-Chang Chang
Affiliation:
National Nano Device Laboratory, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Jeng-Dong Sheu
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Wen-Kuan Yeh
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Fu-Ming Pan
Affiliation:
National Nano Device Laboratory, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Chun-Yen Chang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
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Abstract

Selective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 399
Copyright
Copyright © Materials Research Society 1996

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References

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