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Annihilation Radii for Dislocations Intercepting a Free Surface with Application to Heteroepitaxial Thin Film Growth

Published online by Cambridge University Press:  10 February 2011

M. Chang ,
S.K. Mathis ,
G.E. Beltz  and
C.M. Landis
M. Chang
Affiliation:
Department of Mechanical and Environmental Engineering
S.K. Mathis
Affiliation:
Department of Materials University of California, Santa Barbara, CA 93106–5070
G.E. Beltz
Affiliation:
Department of Mechanical and Environmental Engineering
C.M. Landis
Affiliation:
Department of Mechanical and Environmental Engineering
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Abstract

One critical issue in heteroepitaxial, lattice mismatched growth is the inevitable appearance of threading dislocations which reside in the relaxing film and degrade its semiconducting properties. It has been shown in previous work that threading dislocations interact with each other through a series of annihilation and fusion reactions to decrease their density as the film thickness increases and follow a 1/h decay, where h is the film thickness. A characteristic reaction radius is associated with these interactions. In previous simulations, the reaction radius was taken to be a constant value estimated using a simple approximation based on infinite, parallel dislocation lines. Here, a continuum-based elasticity approach is taken to more accurately quantify the reaction radius by comparing the Peach-Koehler force of one dislocation acting on another at a free surface with the lattice resistance to dislocation motion. The presence of the free surface gives rise to a moderate reduction of the interaction force. Results are compared with preliminary experimental data for GaAs films grown on InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 9
Copyright
Copyright © Materials Research Society 1999

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