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Annealing Behavior of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient

Published online by Cambridge University Press:  01 February 2011

C. Tsamis ,
D. Skarlatos ,
I. Raptis ,
D. Tsoukalas ,
P. Calvo ,
B. Colombeau ,
F. Cristiano  and
A. Claverie
C. Tsamis
Affiliation:
IMEL/NCSR “Demokritos”, Terma Patriarchou Grigoriou, P.O.BOX 60228, 15310 Aghia Paraskevi, Athens, Greece
D. Skarlatos
Affiliation:
IMEL/NCSR “Demokritos”, Terma Patriarchou Grigoriou, P.O.BOX 60228, 15310 Aghia Paraskevi, Athens, Greece
I. Raptis
Affiliation:
IMEL/NCSR “Demokritos”, Terma Patriarchou Grigoriou, P.O.BOX 60228, 15310 Aghia Paraskevi, Athens, Greece
D. Tsoukalas
Affiliation:
IMEL/NCSR “Demokritos”, Terma Patriarchou Grigoriou, P.O.BOX 60228, 15310 Aghia Paraskevi, Athens, Greece
P. Calvo
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347 31055 Toulouse cedex 4, France
B. Colombeau
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347 31055 Toulouse cedex 4, France
F. Cristiano
Affiliation:
LAAS/CNRS, 7 av. Col. Roche, 31077 Toulouse, France
A. Claverie
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347 31055 Toulouse cedex 4, France
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Abstract

In this work, we report data for the growth kinetics of locally confined dislocation loops organized within lines of controlled dimension and periodicity. The dislocation loop lines were formed in the crystalline substrate after local Si implantation and annealing in predefined areas. The distance between the lines ranges between 0.2 νm to 5 μm. It is shown that the kinetics of the DLs depends on the distance between them. When the distance is less than 1 μm, the DLs behave in a similar fashion like those grown in a continuous layer, under inert and oxidizing conditions. However, when the distance between the lines is increased (eg. 5 μm), the behavior of the loops is changed. Fast dissolution of the dislocations loops is observed during annealing in inert ambient, due to enhanced interstitial losses, while under oxidizing conditions the loops grow faster.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C5.8
Copyright
Copyright © Materials Research Society 2002

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