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Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image

Published online by Cambridge University Press:  01 February 2011

Kentaro Kinoshita ,
Tatsuya Makino ,
Yoda Takatoshi ,
Dobashi Kazufumi  and
Kishida Satoru
Kentaro Kinoshita
Affiliation:
[email protected], Tottori University, Department of Information and Electronics, 4-101 Koyama-Minami, Tottori, Tottori, 680-8552, Japan, +81-857-31-5244, +81-857-31-0880
Tatsuya Makino
Affiliation:
[email protected], Tottori University, Department of Information and Electronics, Tottori, Tottori, Japan
Yoda Takatoshi
Affiliation:
[email protected], Tottori University, Department of Information and Electronics, Tottori, Tottori, Japan
Dobashi Kazufumi
Affiliation:
[email protected], Tottori University, Department of Information and Electronics, Tottori, Tottori, Japan
Kishida Satoru
Affiliation:
[email protected], Tottori University, Department of Information and Electronics, Tottori, Tottori, Japan
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Abstract

Both a low resistance state and a high resistance state which were written by the voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy (C-AFM) were observed by using scanning electron microscope (SEM) and electron probe micro analysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed by using energy dispersive X-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination which affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the second electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film.

Keywords

memorydefectsfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G12-03
Copyright
Copyright © Materials Research Society 2010

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References

1 Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In and Moon, J. T., Tech. Digest IEDM 2004, p. 587.Google Scholar
2 Kim, K. M., Choi, B. J., and Hwang, C. S., Appl. Phys. Letts. 90, 242906 (2007).10.1063/1.2748312Google Scholar
3 Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., and Tanaka, H., Jpn. J. Appl. Phys. 45, L991 (2006).10.1143/JJAP.45.L991Google Scholar
4 Gibbons, J. F. and Beadle, W. E., Solid-State Electron. 7, 785 (1964).10.1016/0038-1101(64)90131-5Google Scholar
5 Lee, M.-J., Han, S., Jeon, S. H., Park, B. H., Kang, S., Ahn, S-E., Kim, K. H., Lee, C. B., Kim, C. J., Yoo, I.-K., Seo, D. H., Li, X.-S., Park, J.-B., Lee, J.-H., and Park, Y., Nano Lett. 9, 1476 (2009).10.1021/nl803387qGoogle Scholar
6 Shima, H., Takano, F., Muramatsu, H., Yamazaki, M., Akinaga, H., and Kogure, A, phys. stat. sol. (RRL) 2, 99 (2008).10.1002/pssr.200802003Google Scholar
7 Yoshida, C. Kinoshita, K., Yamasaki, T., and Sugiyama, Y., Appl. Phys. Lett. 93, 042106 (2008).Google Scholar
8 Kinoshita, K., Okutani, T., Tanaka, H., Hinoki, T., Yazawa, K., Ohmi, K., and Kishida, S., Appl. Phys. Lett. 96, 143506 (2010).Google Scholar
9 Hsu, J., Lai, H., Lin, H., Chuang, C., and Huang, J., J. Vac. Sci. Technol. B 21, 2599 (2003).10.1116/1.1621655Google Scholar
10 Hilleret, N., scheuerlein, C., taborelli, M., Appl. Phys. A 76, 1085 (2003).10.1007/s00339-002-1667-2Google Scholar
11 Nian, Y. B., Strozier, J., Wu, N. J., Chen, X., and Ignatiev, A., Phys. Rev. Lett. 98, 146403 (2007).10.1103/PhysRevLett.98.146403Google Scholar
12 Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., and Tanaka, H., Appl. Phys. Lett. 89 (2006) 103509.10.1063/1.2339032Google Scholar
13 Inoue, I. H., Yasuda, S., Akinaga, H., and Takagi, H., Phys. Rev. B 77 (2008) 035105.10.1103/PhysRevB.77.035105Google Scholar
14 Kudo, M., Sakai, Y. and Ichinokawa, T., Appl. Phys. Lett. 76, 3475 (2000).10.1063/1.126682Google Scholar