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Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

Published online by Cambridge University Press:  01 February 2011

Michael Dudley ,
Shayan Byrappa ,
Huanhuan Wang ,
Fangzhen Wu ,
Yu Zhang ,
Balaji Raghothamachar ,
Gloria Choi ,
Edward Sanchez ,
Darren Hansen  and
Roman Drachev
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Michael Dudley
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Shayan Byrappa
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Huanhuan Wang
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Fangzhen Wu
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Yu Zhang
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Old Engineering Building, Room 311, Stony Brook, New York, 11790, United States, 6317421987
Balaji Raghothamachar
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Gloria Choi
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Edward Sanchez
Affiliation:
[email protected], Dow Corning Compound Semiconductor Solutions, Midland, Michigan, United States
Darren Hansen
Affiliation:
[email protected], Dow Corning Compound Semiconductor Solutions, Midland, Michigan, United States
Roman Drachev
Affiliation:
[email protected], Dow Corning Compound Semiconductor Solutions, Midland, Michigan, United States
Mark Loboda
Affiliation:
[email protected], Dow Corning Compound Semiconductor Solutions, Midland, Michigan, United States
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Abstract

Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of one hundred millimeter diameter, 4H-SiC wafers grown using Physical Vapor Transport (PVT) under specially designed low stress conditions. Such low stress growth conditions have, for example enabled reductions of basal plane dislocation (BPD) densities by two or three orders of magnitude compared to previous levels down to just a few hundred per square centimeter. This provides a unique opportunity to discern details of dislocation behavior which were previously precluded due to complications of image overlap at higher densities. Among the phenomena observed in these studies is the deflection of threading dislocations onto the basal plane producing various stacking fault configurations. Analysis of the contrast from these faults enables determination of their fault vectors which, in turn, provides insight into their possible formation mechanisms.

Keywords

crystal growthdefectsdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B02-02
Copyright
Copyright © Materials Research Society 2010

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References

[1] Neudeck, P.G.; Powell, J.A. IEEE Electron Device Letters, 15, 63265, (1994))Google Scholar
[2] Neudeck, P., Huang, W., and Dudley, M., IEEE Trans. Electron. Devices, 46, 478–484; (1999).Google Scholar
[3] Chen, H., Raghothamachar, B., Vetter, W., Dudley, M., Wang, Y., Skromme, B.J., Mater. Res. Soc. Symp. Proc., 911, 0911-2B12-203, 169–174, Warrendale, PA, (2006)).Google Scholar
[4] Lendenmann, H., Dahlquist, F., Johansson, N., Soderholm, R., Nilsson, P. A., Bergman, J. P. and Skytt, P., Mater. Sci. Forum 353–356, 727 (2001).Google Scholar
[5] Dudley, M., Chen, Y. and Huang, X. R., Mater. Sci. Forum, 600–603, 261–266, (2009).Google Scholar
[6] Dudley, M. and Huang, X., Mater. Sci. Forum, 338–342, pp. 431–436, Trans Tech Publications, Switzerland, (2000).Google Scholar
[7] Dudley, M., Wang, S., Huang, W., Carter, C.H. Jr, and Fazi, C., J. Phys. D: Appl. Phys., 28, A63–A68, (1995).Google Scholar
[8] Dudley, M., Si, W., Wang, S., Carter, C.H. Jr, Glass, R., and Tsvetkov, V.F., II Nuovo Cimento, 19D, 153–164, (1997).Google Scholar
[9] Kamata, I., Nagano, M., Tsuchida, H., Chen, Y., and Dudley, M., J Cryst. Growth, 311, 1416–1422, (2009).Google Scholar
[10] Zhang, N., Zhang, Y., Raghothamachar, B., Byrappa, S., Choi, G., Sanchez, E. K., Hansen, D., Drachev, R., and Loboda, M.J., Materials Science Forum, 645–648, pp. 291–294, (2010)Google Scholar
[11] Authier, A. and Epelboin, Y., Phys. Stat. Sol.(a), 41, K9, (1977)Google Scholar
[12] Dudley, M. et al, in PreparationGoogle Scholar
[13] Pirouz, P. and Yang, J.W., Ultramicroscopy, Volume 51, Issues 124, Pages 189–214, (1993)Google Scholar
[14] Heindl, J., Dorsch, W. and Strunk, H.P., Phys. Rev. Letts., 80, 740–741, (1998).Google Scholar
[15] Presser, V., Loges, A. and Nickel, K.G., Phil. Mag. 88, 1639–1657, (2008)Google Scholar
[16] Ouisse, T., Chaussende, D., and Auvray, L., J. Appl. Cryst., 43, 122–133, (2010)Google Scholar
[17]Stacking rules dictate that if a leading partial converts tetrahedra from untwinned to twinned, then a trailing partial one unit cell below is necessarily sessile since untwinned tetrahedra cannot undergo an untwinning deformation.Google Scholar
[18] Hassan, J., Henry, A., Ivanov, I.G., and Bergman, J.P., J. Appl. Phys., 105, 123513, (2009)Google Scholar
[19] Tsuchida, H., Ito, M., Kamata, I. and Nagano, M., Phys. Status Solidi, B246, No.7, 1553–1568, (2009)Google Scholar