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Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

Czang-Ho Lee ,
Andrei Sazonov ,
Mohammad R. E. Rad ,
G. Reza Chaji  and
Arokia Nathan
Czang-Ho Lee
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, ON, N2L 3G1, Canada
Andrei Sazonov
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, ON, N2L 3G1, Canada
Mohammad R. E. Rad
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, ON, N2L 3G1, Canada
G. Reza Chaji
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, ON, N2L 3G1, Canada
Arokia Nathan
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, Waterloo, ON, N2L 3G1, Canada
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Abstract

We report on directly deposited plasma-enhanced chemical vapor deposition (PECVD) nanocrystalline silicon (nc-Si:H) ambipolar thin-film transistors (TFTs) fabricated at 260 °C. The ambipolar operation is achieved adopting Cr metal contacts with high-quality nc-Si:H channel layer, which creates highly conductive Cr silicided drain/source contacts, reducing both electron and hole injection barriers. The n-channel nc-Si:H TFTs show a field-effect electron mobility (meFE) of 150 cm2/Vs, threshold voltage (VT) ~ 2 V, subthreshold slope (S) ~0.3 V/dec, and ON/OFF current ratio of more than 107, while the p-channel nc-Si:H TFTs show a field-effect hole mobility (mhFE) of 26 cm2/Vs, VT ~ -3.8 V, S ~0.25 V/dec, and ON/OFF current ratio of more than 106. Complementary metal-oxide-semiconductor (CMOS) logic integrated with two ambipolar nc-Si:H TFTs shows reasonable transfer characteristics. The results presented here demonstrate that low-temperature nc-Si:H TFT technology is feasible for total integration of active-matrix TFT backplanes.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)crystal growthelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A22-05
Copyright
Copyright © Materials Research Society 2006

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