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Ambient Dependence of Agglomeration Stability of Cu/Ta Films

Published online by Cambridge University Press:  10 February 2011

J. W. Hartman ,
H. A. Atwater ,
Imran Hashim ,
Barry Chin  and
Fusen Chen
J. W. Hartman
Affiliation:
Applied Physics, California Institute of Technology, Pasadena CA 91125
H. A. Atwater
Affiliation:
Applied Physics, California Institute of Technology, Pasadena CA 91125
Imran Hashim
Affiliation:
Metal Deposition Product Business Group, Applied Materials Inc., Santa Clara, CA 95054
Barry Chin
Affiliation:
Metal Deposition Product Business Group, Applied Materials Inc., Santa Clara, CA 95054
Fusen Chen
Affiliation:
Metal Deposition Product Business Group, Applied Materials Inc., Santa Clara, CA 95054
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Abstract

We have investigated the effects of oxygen contamination on the agglomeration of thin Cu films fabricated by physical vapor deposition on Ta barriers. Thin Cu films on clean, ultrahigh vacuum-deposited Ta barriers were stable against agglomeration when annealed for several hours at temperatures as high as T=380°C. However, on Ta barriers intentionally contaminated with oxygen, agglomeration of Cu films occurred within minutes when annealed above 300°C. Time-resolved reflectivity was used to study film evolution and agglomeration in situ. Atomic force microscopy was used for post-growth characterization of agglomeration. Characterization of Ta barriers by X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry demonstrated that clean Cu films on contaminated Ta barriers containing as little as 5% oxygen were unstable against agglomeration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 303
Copyright
Copyright © Materials Research Society 1998

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References

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