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All Hot Wire CVD Organic/Inorganic Hybrid Barrier Layers for Thin Film Encapsulation

Published online by Cambridge University Press:  28 May 2012

Diederick A. Spee
Affiliation:
Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3508 TA Utrecht, The Netherlands
Merijn R. Schipper
Affiliation:
Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3508 TA Utrecht, The Netherlands
Karine H.M. van der Werf
Affiliation:
Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3508 TA Utrecht, The Netherlands
Jatindra K. Rath
Affiliation:
Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3508 TA Utrecht, The Netherlands
Ruud E.I. Schropp
Affiliation:
Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3508 TA Utrecht, The Netherlands
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Abstract

A water vapor barrier layer is presented that is deposited entirely at temperatures below ∼100oC. Our method, using hot wire chemical vapor deposition (HWCVD), is effective in reducing the issue of pinholes in single layers of silicon nitride (SiNx) made at such low substrate temperatures. We succeeded in depositing an all hot-wire simple three-layer structure consisting of two low-temperature SiNx layers with a polymer layer in between, exhibiting a water vapor transmission rate (WVTR) as low as 5*10-6 g/m2/day, determined at a temperature of 60°C and a relative humidity of 90%. This WVTR is low enough for organic and polymer devices. In a second experiment the robustness of the barrier layer is shown with respect to environmental dust.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

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