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Adhesion of Crystalline GeSbTe/TiN Interface Characterized by Four Point Bend, Nanoindentation, and Nanoscratch

Published online by Cambridge University Press:  01 February 2011

guohua Wei ,
Jun Liu ,
David Fillmore ,
Mike Violette  and
Shifeng Lu
guohua Wei
Affiliation:
[email protected], Micron Technology, Surface Analysis Lab, Boise, ID, 83707, United States
Jun Liu
Affiliation:
[email protected], Micron Technology, R & D Department, Boise, ID, 83707, United States
David Fillmore
Affiliation:
[email protected], Micron Technology, Surface Analysis Laboratory, Boise, ID, 83707, United States
Mike Violette
Affiliation:
[email protected], Micron Technology, R & D Department, Boise, ID, 83707, United States
Shifeng Lu
Affiliation:
[email protected], Micron Technology, Surface Analysis Laboratory, Boise, ID, 83707, United States
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Abstract

Reversible structural phase change phenomenon of certain chalcogenide materials has been investigated extensively in the past decades. Among various phase change chalcogenide materials, Ge2Sb2Te5 (GST) is the most studied material due to its superior optical, electrical and mechanical properties. One of the challenges in using GST is the poor adhesion between crystalline GeSbTe (c-GST) and the substrate, such as TiN. In this work, the adhesion of the c-GST/TiN interface of two samples deposited by different techniques was characterized using four-point bend, nanoindentation and nanoscratch techniques. The nanoindentation and nanoscratch data agree well with the four point bend data. The paper also discusses the application potential of nanoindentation and nanoscratch techniques as qualitative methods for adhesion evaluation in semiconductor process development.

Keywords

adhesionhardnessnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I10-09
Copyright
Copyright © Materials Research Society 2007

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