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Activation Energy of Electromigration in Copper Thin Film Conductor Lines

Published online by Cambridge University Press:  15 February 2011

A. Gladkikh ,
Y. Lereah ,
M. Karpovski ,
A. Palevski  and
Yu. S. Kaganovskii
A. Gladkikh
Affiliation:
Department of Physical Electronics, Tel Aviv University, Tel Aviv 69987, Israel.
Y. Lereah
Affiliation:
Department of Physical Electronics, Tel Aviv University, Tel Aviv 69987, Israel.
M. Karpovski
Affiliation:
School of of Physics and Astronomy, Tel Aviv University, Tel Aviv 69987, Israel.
A. Palevski
Affiliation:
School of of Physics and Astronomy, Tel Aviv University, Tel Aviv 69987, Israel.
Yu. S. Kaganovskii
Affiliation:
Department of Physics, Bar-Ilan University, Ramat Gan 52900, Israel.
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Abstract

Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 121
Copyright
Copyright © Materials Research Society 1996

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