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Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated Si

Published online by Cambridge University Press:  21 February 2011

Yoshihiro Ueta ,
Shiro Sakai ,
Yasushi Kamiya  and
Hisao Sato
Yoshihiro Ueta
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Shiro Sakai
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Yasushi Kamiya
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Hisao Sato
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
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Abstract

The acceptor binding energy is calculated to find out the best acceptor impurity in InN, GaN and AlN. Be is predicted to be the shallowest acceptor and the next are Mg and Zn. Group IV elements such as C or Si are very deep. Band lineup is calculated to be ΔEc : ΔEv = 2.1 eV : 0.76 eV = 0.73 : 0.27 = 2.8 : 1 for GaN/AlN and ΔEc : ΔEv = 0.88 eV : 0.66 eV = 0.57 : 0.43 = 1.3 : 1 for GaN/InN. GaN is grown on GaAs and GaP-coated Si substrate by MOCVD. GaAs intermediate layer gives better GaN compared to GaP intermediate layer. It is suggested that the lower bulk modulus of GaAs than that of GaP gives this difference.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 459
Copyright
Copyright © Materials Research Society 1994

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References

1. Phillips, J.C., Bonds and Bands in Semiconductors, (Academic Press, New York, 1973) Chapt.9.Google Scholar
2. Jaros, M., Deep Levels in Semiconductors, (Adam Hilger Ltd., Bristol, 1982) Chapt. 9.Google Scholar
3. Harrison, W.A., Electronic Materials, ed. by Chelikowsky, J.R. and Franciosi, A., (Springer-Verlag, Berlin, 1991) 9.Google Scholar
4. Amano, H. and Akasaki, I., Oyobutsuri 60 (1991) 163 (in Japanese).Google Scholar
5. Nakamura, S., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 32 (1993) L338.Google Scholar
6. Sakai, S., Ueta, Y. and Terauchi, Y., Jpn. J. Appl. Phys. 32 (1993) 4413.Google Scholar
7. Harrison, W.A., J. Vac. Sci. Technol. 14 (1977) 1016.Google Scholar
8. Gonda, S., Solid State Communications 60 (1986) 249.Google Scholar
9. Albanesi, E.A., Lambrecht, W.R. and Segali, B., MRS 1994 Spring Meeting (1994) D4.4.Google Scholar
10. Lei, T. and Moustakas, T.D., J. Appl. Phys. 71 (1992) 4933.Google Scholar
11. Watanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K. and Akasaki, I., J. Crystal Growth 128 (1993) 391.Google Scholar
12. Hirosawa, K., Hiramatsu, K., Sawaki, N. and Akasaki, I., Jpn. J. Appl. Phys. 32 (1993) L1039.Google Scholar