Hostname: page-component-6bf8c574d5-mcfzb Total loading time: 0 Render date: 2025-03-07T17:36:04.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Accelerated Stress Testing of a-Si:H TFTs for Amoled Displays

Published online by Cambridge University Press:  21 March 2011

Kapil Sakariya ,
Clement K.M. Ng ,
I-Heng Huang ,
Afrin Sultana ,
Sheng Tao  and
Arokia Nathan
Kapil Sakariya
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Clement K.M. Ng
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
I-Heng Huang
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Afrin Sultana
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Sheng Tao
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Arokia Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Get access

Abstract

In this work, we have developed a method for accelerated stress testing of TFT driver circuits for AMOLED display backplane applications. Based on high current and temperature stress measurements, acceleration factors have been retrieved, which can be used to significantly reduce the testing time required to guarantee a 20000-hour display backplane lifespan.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.11
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sakariya, K., Servati, P., Striakhilev, D., and Nathan, A., “VT-Shift Compensated a-Si:H Pixel Circuits for AMOLED Displays,” Proc. EuroDisplay 2002: The 22nd International Display Research Conference, pp. 609–612, Oct. 1-4, 2002.Google Scholar
[2] Goh, J.C., Jang, J., Cho, K.S., and Kim, C.K., “A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes,” IEEE Elec. Dev. Lett., vol. 24, no. 9, pp. 583–585, Sept. 2003.Google Scholar
[3] Sanford, J. L., Libsch, F. R., “TFT AMOLED Pixel Circuits and Driving Methods,” SID Symposium 2003 Digest, pp. 10-13.Google Scholar
[4] Powell, M. J., Berkel, C. van, and Hughes, J. R., “Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors,” App. Phys. Lett., vol. 54, no. 14, pp. 1323–1325, April 1989.Google Scholar
[5] Powell, M. J., “The Physics of Amorphous-Silicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Vol. 36, No. 12, pp. 2753–2763, Dec. 1989.Google Scholar
[6] Libsch, F. R., “Steady State and Pulsed Bias Stress Induced Degradation in Amorphous Silicon Thin Film Transistors for Active-Matrix Liquid Crystal Displays”, IEDM, pp. 681–684, 1992.Google Scholar
[7] Street, R. A., Hack, M., and Jackson, W. B., “Mechanisms of thermal equilibration in doped amorphous silicon”, Physical Review B, Vol. 37, No. 8, pp. 4209–4224, Mar. 1988.Google Scholar
[8] McMahon, T. J. and Tsu, R., “Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon”, Appl. Phys. Lett., Vol. 51, No. 6, pp 412–414, Aug. 1987.Google Scholar