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Ac and Dc Characterization and Spice Modeling of Short Channel Polysilicon Tfts

Published online by Cambridge University Press:  10 February 2011

M. D. Jacunski ,
M. S. Shur ,
T. Ytterdal ,
A. A. Owusu  and
M. Hack
M. D. Jacunski
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
T. Ytterdal
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
A. A. Owusu
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
M. Hack
Affiliation:
dpiX, 3406 Hillview Ave., Palo Alto, CA 94302
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Abstract

We present an analytical SPICE model for the AC and DC characteristics of n and p channel polysilicon TFTs which scales fully with channel length and width in all regimes of operation (leakage, subthreshold, above threshold, and kink) and accounts for the frequency dispersion of the capacitance. Once physically based parameters have been extracted from long channel TFTs, which include the gate length and drain bias dependencies of the device parameters, our model accurately reproduces short channel device characteristics. The AC model includes the input channel resistance in series with the gate oxide capacitance. As a result, our model is able to fit the frequency dispersion of the device capacitances. The model has been implemented in the AIM-Spice simulator and good agreement is observed between measured and modeled results for gate lengths down to 4 gim.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 213
Copyright
Copyright © Materials Research Society 1997

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