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X-Ray Study of Non-Periodic Si/SiGe Multilayers

Published online by Cambridge University Press:  22 February 2011

H. -J. Herzog ,
H. Kibbel  and
F. Schäffler
H. -J. Herzog
Affiliation:
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
H. Kibbel
Affiliation:
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
F. Schäffler
Affiliation:
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
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Abstract

X-ray diffraction is applied for the assessment of structural data such as lattice mismatch and layer thickness of MBE grown Si/Si1−xGex heterobipolar transistor and double-barrier resonant-tunneling structures. Rocking curves from the former structure show distinct features which are obviously correlated to the individual layer parameters. The diffraction profile of the resonant tunneling structure is not only more complicated because of the larger number of parameters but also due to the strong interference effects resulting from the layer set-up. For a determination of the structural parameters a comparison of the experimental diffraction pattern with simulated rocking curves is performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 229
Copyright
Copyright © Materials Research Society 1991

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References

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