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X-Ray Reflectometry Determination of Structural Information from Atomic Layer Deposition Nanometer-scale Hafnium Oxide Thin Films

Published online by Cambridge University Press:  01 February 2011

Donald Windover ,
D. L. Gil ,
J. P. Cline ,
A Henins ,
N. Armstrong ,
P. Y. Hung ,
S. C. Song ,
R. Jammy  and
A. Diebold
Donald Windover
Affiliation:
[email protected], National Institute of Standards and Technology, Ceramics Division, 100 Bureau Drive, Gaithersburg, MD, 20899-8520, United States, 301-975-6102, 301-975-5334
D. L. Gil
Affiliation:
[email protected], Coruscavi Software, Washington, DC, 20037, United States
J. P. Cline
Affiliation:
[email protected], National Institute of Standards and Technology, Ceramics Division, Gaithersburg, MD, 20899, United States
A Henins
Affiliation:
[email protected], National Institute of Standards and Technology, Ceramics Division, Gaithersburg, MD, 20899, United States
N. Armstrong
Affiliation:
[email protected], UTS, Department of Physics and Advanced Materials, Sydney, N/A, Australia
P. Y. Hung
Affiliation:
[email protected], SEMATECH, Austin, TX, 78741, United States
S. C. Song
Affiliation:
[email protected], SEMATECH, Austin, TX, 78741, United States
R. Jammy
Affiliation:
[email protected], SEMATECH, Austin, TX, 78741, United States
A. Diebold
Affiliation:
[email protected], University at Albany, College of Nanoscale Science and Engineering, Albany, NY, 12203, United States
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Abstract

This work demonstrates the application of a Markov Chain Monte Carlo (MCMC) approach to modeling X-ray reflectometry (XRR) data taken from a sub 10 nm Hafnium oxide film. We present here a comparison of two structural models for a 6 nm HfxOy atomic layer deposition (ALD) film on Si. Using the MCMC method and two distinct structural models, we show evidence of a thin interface between the HfxOy and Si layers with a density much higherthan native SiO2. Results from genetic algorithm XRR analysis and thickness measurements using cross-sectional transmission electron microscopy are included for comparison. We also demonstrate that our interpretation of HfxOy thickness differs between the two structural models (i.e., total film thicknesses may be partially additive within each model).

Keywords

x-ray reflectivitythin filmHf
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-05
Copyright
Copyright © Materials Research Society 2007

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