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XPS and Sims Studies of CVD-GROWN Cubic SiC Films on Si(100)

Published online by Cambridge University Press:  21 February 2011

A. T. S. Wee ,
Z. C. Feng ,
H. H. Hng ,
K. L. Tan ,
C. C. Tin ,
R. Hu  and
R. Coston
A. T. S. Wee
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
H. H. Hng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
K. L. Tan
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
C. C. Tin
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
R. Hu
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
R. Coston
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
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Abstract

A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted C.H. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 411
Copyright
Copyright © Materials Research Society 1994

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References

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