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Wafer Cleaning Influence on the Roughness of the Si/SiO2 Interface

Published online by Cambridge University Press:  15 February 2011

A. Munkholm ,
S. Brennan  and
Jon P. Goodbread
A. Munkholm
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
Jon P. Goodbread
Affiliation:
Hewlett-Packard Co., Palo Alto, CA 94301
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Abstract

The roughness of the Si/SiO2 interface has a great impact on the electrical properties of the gate-oxide in integrated circuits and consequently it is a large concern for the semiconductor industry. As the thickness of the oxide is decreased, the role of the roughness becomes more critical for the device. The nature of a buried interface prohibits the use of commonly used surface techniques. By the use of crystal truncation rod (CTR) x-ray scattering, it is possible to get information on the termination of the bulk silicon in a nondestructive fashion. The authors have investigated the influence of different cleanings on interfacial roughness using synchrotron radiation-based CTR-scattering. In particular, we looked at silicon(001) wafers both before and after the growth of a 1000Å thermal oxide. The results show that the use of HF during cleaning results in a smoother interface between silicon and its native oxide. Due to smoothing of the interface during the oxidation process, the difference between the various cleaning methods becomes less significant for these thick oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 303
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Andrews, S.R. and Cowley, R.A.. J. Phys. C: Solid State Phys. 18 (1985).Google Scholar
2. Robinson, I.K., Phys. Rev. B 33, 6 (1986).Google Scholar
3. Tang, M.-T., Evans-Lutterodt, K.W., Higashi, G.S., and Boone, T., Appl. Phys. Lett. 62, 24 (1993).Google Scholar
4. Tang, M.-T., Evans-Lutterodt, K.W., Green, M.L., Brasen, D., Krisch, K., Manchanda, L., Higashi, G.S., and Boone, T., Appl. Phys. Lett. 64, 6 (1994).Google Scholar
5. Green, M.L., Brasen, D., Evans-Lutterodt, K.W., Feldman, L.C., Krisch, K., Lennard, W., Tang, H.-T., Manchanda, L. and Tang, M.-T., Appl. Phys. Lett. 65, 7 (1994).Google Scholar
6. For an explanation of why a single reflection is sufficient, see Munkholm, A., et al. in preparation.Google Scholar
7. Specht, E.D. and Walker, F.J.. J. Appl. Crystallography 26, 2 (1993).Google Scholar