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The Use of the Four-Point Bending Technique for Determining the Strength of Low K Dielectric/Barrier Interface

Published online by Cambridge University Press:  17 March 2011

Ting Tsui ,
Cindy Goldberg ,
Greg Braeckelman ,
Stan Filipiak ,
Bradley M. Ekstrom ,
J.J. Lee ,
Eric Jackson ,
Matthew Herrick ,
John Iacoponi  and
Jeremy Martin
...Show all authors
Ting Tsui
Affiliation:
Advanced Micro Devices, Technology Development Group, AMD/Motorola Alliance, Austin, TX
Cindy Goldberg
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
Greg Braeckelman
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
Stan Filipiak
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
Bradley M. Ekstrom
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
J.J. Lee
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
Eric Jackson
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
Matthew Herrick
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
John Iacoponi
Affiliation:
Advanced Micro Devices, Technology Development Group, AMD/Motorola Alliance, Austin, TX
Jeremy Martin
Affiliation:
Advanced Micro Devices, Technology Development Group, AMD/Motorola Alliance, Austin, TX
David Sieloff
Affiliation:
Advanced Product Research and Development Laboratory, Motorola Inc., Austin, TX
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Abstract

One of the important reliability challenges in integrating copper/Low-K dielectric technology has been adhesion between the Low-K dielectric and barrier metal. This investigation explored the applicability of the four-point bend technique for determining the adhesion strength of a fluorine doped low dielectric constant oxide in contact with tantalum barrier layer. Time of flight secondary ion mass spectroscopy (ToFSIMS) was used for surface chemical analyses of the delaminated surfaces to identify the fractured interface and its chemical compositions. The effect of annealing on mechanical strength was coupled with chemical analysis to discern the adhesion properties. Experimental results suggested that fluorine rich interfacial layer formation was associated with degraded adhesion characteristics between Low-K dielectric and tantalum barrier metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D1.2.1
Copyright
Copyright © Materials Research Society 2000

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References

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