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The Use of Secondary Ion Mass Spectrometry to Investigate Wire Bonding Yield Problems on Gold Contacts

Published online by Cambridge University Press:  21 February 2011

G. R. Mount ,
T. L. Walzak ,
Y. C. Koo  and
D. McClure
G. R. Mount
Affiliation:
Philips Semiconductors, Sunnyvale, California, U.S.A. (current address: Charles Evens Associate, San Jose, California, U.S.A.)
T. L. Walzak
Affiliation:
Research Office, University of Western Ontario, London, Ontario, Canada.
Y. C. Koo
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada.
D. McClure
Affiliation:
McClure Consulting, Georgetown, Texas, U.S.A. (for Celestica Inc. Canada)
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Abstract

With ongoing demand for high density wiring and high I/O on VLSI chips, the requirement of high wire bond yield is a challenge to achieve low cost, high performance and reliable products. Secondary Ion Mass Spectrometry (SIMS) was used to investigate the metallurgical contaminants on the gold wire bond pads and their impact on wire bond yields. SIMS depth profile studies showed that copper and nickel in concentrations greater than 1 wt% caused poor wire bondability, while copper concentration at less than 0.1 wt% resulted in good bondability of Al ultrasonic wire bonded to the gold pads.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 245
Copyright
Copyright © Materials Research Society 1995

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References

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