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Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications

Published online by Cambridge University Press:  31 January 2011

Pierre-Eugène Coulon ,
Kristel Chan Shin Yu ,
Sylvie Schamm ,
Gerard Ben Assayag ,
Béatrice Pécassou ,
Abdelilah Slaoui ,
Sahu Bhabani ,
Marzia Carrada ,
Sandrine Lhostis  and
Caroline Bonafos
Pierre-Eugène Coulon
Affiliation:
[email protected], CEMES-CNRS, Toulouse, France
Kristel Chan Shin Yu
Affiliation:
[email protected], LAAS-CNRS, Toulouse, France
Sylvie Schamm
Affiliation:
[email protected], United States
Gerard Ben Assayag
Affiliation:
[email protected], CEMES/CNRS, nMat, Toulouse, France
Béatrice Pécassou
Affiliation:
[email protected], CEMES-CNRS, Toulouse, France
Abdelilah Slaoui
Affiliation:
[email protected], CNRS, Strasbourg, France
Sahu Bhabani
Affiliation:
[email protected], CNRS, Strasbourg, France
Marzia Carrada
Affiliation:
[email protected], CNRS, Strasbourg, France
Sandrine Lhostis
Affiliation:
[email protected], ST Microelectronics, Crolles, France
Caroline Bonafos
Affiliation:
[email protected], CEMES/CNRS, nMat, Toulouse, France
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Abstract

The fabrication of NCs is carried out using an innovative method, ultra-low energy (≤5 keV) ion implantation (ULE-II) into thin (6-9 nm) HfO2–based layers in order to form after subsequent annealing a controlled 2D array of Si NCs. The implantation of Si into HfO2 leads to the formation of SiO2–rich regions at the projected range due to the oxidation of the implanted Si atoms. This anomalous oxidation that takes place at room temperature is mainly due to humidity penetration in damaged layers. Different solutions are investigated here in order to avoid this oxidation process and stabilize the Si-phase. Finally, unexpected structures as HfO2 NCs embedded with SiO2 matrix are obtained and show interesting memory characteristics. Interestingly, a large memory window of 1.18 V has been achieved at relatively low sweeping voltage of ± 6 V for these samples, indicating their utility for low operating voltage memory device.

Keywords

memorynanostructureelectron energy loss spectroscopy (EELS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H01-03
Copyright
Copyright © Materials Research Society 2009

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References

1 Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F. and Chan, K., Appl. Phys. Lett. 68, 1377 (1996)Google Scholar
2 Hanafi, H. I., Tiwari, S. and Khan, I., IEEE Trans. Electron Devices 43, 1553 (1996)Google Scholar
3 Bonafos, C., Coffin, H., Schamm, S., Cherkashin, N., Assayag, G. Ben, Dimitrakis, P., Normand, P., Carrada, M., Paillard, V., Claverie, A., Solid-State Electronics 49, 1734 (2005)Google Scholar
4 Lee, J. J., Bai, W. and Kwong, D.-L., IEEE 43rd Annual International Reliability Physics Symposium, San Jose (2005)Google Scholar
5 Lee, J. J., Wang, X., Bai, W., Lu, N. and Kwong, D.-L., IEEE Trans. Electron Devices 50, 2067 (2003)Google Scholar
6 Chen, J. H., Wang, Y. Q., Yoo, W. J., Yeo, Y.-C., Samudra, G., Chan, D. SH, Du, A. Y. and Kwong, D.-L., IEEE Trans. Electron Devices 51, 1840 (2004)Google Scholar
7 Lu, J., Kuo, Y., Yan, J. and Lin, C.-H., Jap. J. Appl. Phys. 45, L901 (2006)Google Scholar
8 Fanciulli, M., Perego, M., Bonafos, C., Mouti, A., Schamm, S., Benassayag, G., Adv. Sci. Technol. 51, 156 (2006)Google Scholar
9 Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Assayag, G. Ben, Claverie, A., Müller, T., Heinig, K. H., Perego, M., Fanciulli, M., Dimitrakis, P. and Normand, P., J. Appl. Phys. 95, 5696 (2004)Google Scholar
10 Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Methods 174, 257 (1980)Google Scholar
11 Carrada, M., Cherkashin, N., Bonafos, C., Benassayag, G., Chassaing, D., Normand, P., Tsoukalas, D., Soncini, V., Claverie, A., Mat. Sci. And Eng. B101, 204 (2003)Google Scholar
12 Schmidt, B., Grambole, D., Herrmann, F., Nucl. Instr. and Meth. in Phys. Res. B191, 482 (2002)Google Scholar
13 Claverie, A., Bonafos, C., Ben Assayag, G., Schamm, S., Cherkashin, N.,Paillard, V., Dimitrakis, P., Kapetenakis, E., Tsoukalas, D., Muller, T., Schmidt, B., Heinig, K. H., Perego, M., Fanciulli, M., Mathiot, D., Carrada, M. and Normand, P., Diffusion in Solids and Liquids 258–260, 531 (2006)Google Scholar
14 Bernal, S., Blanco, G., Calvino, J. J., Omil, J. A. Pérez, Pintado, J. M., J. All. Comp. 408–412, 496 (2006)Google Scholar
15 Suzuki, M., Takashima, A., Koyama, M., Iijima, R., Ino, T., Takenaka, M., Nucl. Instr. and Meth. in Phys. Res. B219–220, 851 (2004)Google Scholar
16 Lin, Y.-H., Chien, C.-H., Lin, C.-T., Chang, C.-Y. and Lei, T.-F., IEEE Trans. Electron Devices 53, 782 (2006)Google Scholar