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Published online by Cambridge University Press: 20 January 2011
We report on the realization of high precision hollow structures directly on silicon suitable for liquid and gas/vapor transport. The formation of hollow structures requires high aspect ratio etching combined with bulk back-side micro-machining to realize silicon-based membranes. The use of a slant angle deposition method has been used as an alternative method for three-dimensional lithography. The transfer of acetone vapor through such tiny holes shows an anomalous behavior where a sharp rise is observed followed by an exponential and gradual decay. These structures can be eventually used as mass ion separation devices.