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Ultrafast Optical Measurements of Acoustic Phonon Attenuation in Amorphous and Nanocrystalline Silicon

Published online by Cambridge University Press:  22 July 2013

Joseph A. Andrade ,
Bryan E. Rachmilowitz ,
Brian C. Daly ,
Theodore B. Norris ,
B. Yan ,
J. Yang  and
S. Guha
Joseph A. Andrade
Affiliation:
Physics and Astronomy Department, Vassar College, 124 Raymond Ave., Poughkeepsie, NY 12604, USA
Bryan E. Rachmilowitz
Affiliation:
Physics and Astronomy Department, Vassar College, 124 Raymond Ave., Poughkeepsie, NY 12604, USA
Brian C. Daly
Affiliation:
Physics and Astronomy Department, Vassar College, 124 Raymond Ave., Poughkeepsie, NY 12604, USA
Theodore B. Norris
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
B. Yan
Affiliation:
Uni-Solar Ovonic LLC, Troy, MI 48084, USA
J. Yang
Affiliation:
Uni-Solar Ovonic LLC, Troy, MI 48084, USA
S. Guha
Affiliation:
Uni-Solar Ovonic LLC, Troy, MI 48084, USA
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Abstract

We have measured the attenuation of longitudinal acoustic waves in a series of amorphous and nanocrystalline silicon films using picosecond ultrasonics. We determined the attenuation of amorphous Si to be lower than what is predicted by theories based on anharmonic interactions of the ultrasound wave with localized phonons or extended resonant modes. We determined the attenuation of nanocrystalline Si to be nearly one order of magnitude higher than amorphous Si.

Keywords

amorphousSielastic properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 147 - 153
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Hondongwa, D.B., Daly, B.C., Norris, T.B., Yan, B., Yang, J., and Guha, S., Phys. Rev. B 83, 121303R (2011).CrossRefGoogle Scholar
Cahill, D.G., Katiyar, M., and Abelson, J.R., Phys. Rev. B 50, 6077 (1994).CrossRefGoogle Scholar
Zink, B.L., Pietri, R., and Hellman, F., Phys. Rev. Lett. 96, 055902 (2006).CrossRefGoogle Scholar
Fabian, J. and Allen, P.B., Phys. Rev. Lett. 82, 1478 (1999).CrossRefGoogle Scholar
Allen, P.B. and Feldman, J.L., Phys. Rev. Lett. 62, 645 (1989).CrossRefGoogle Scholar
Liu, X., Feldman, J.L., Cahill, D.G., Crandall, R.S., Bernstein, N., Photiadis, D.M., Mehl, M.J., Papaconstantopolous, D.A., Phys. Rev. Lett. 102, 035901 (2009).CrossRefGoogle Scholar
Yang, H.S., Cahill, D.G., Liu, X., Feldman, J.L., Crandall, R.S., Sperling, B.A., and Abelson, J.R., Phys. Rev. B. 81, 104203 (2010).CrossRefGoogle Scholar
Yue, G., Yan, B., Yang, J., and Guha, S., Mater. Res. Soc. Symp. Proc. 989, 359 (2007).CrossRefGoogle Scholar
Yan, B., Yue, G., Yang, J., Guha, S., Williamson, D. L., Han, D., and Jiang, C.-S., Appl. Phys. Lett. 85, 1955 (2004).CrossRefGoogle Scholar
Thomsen, C., Grahn, H.T., Maris, H.J., and Tauc, J., Phys. Rev. B 34, 4132 (1986).Google Scholar
Antonelli, G.A., Perrin, B., Daly, B.C., and Cahill, D.G., MRS Bull. 31, 607 (2006).CrossRefGoogle Scholar
Morath, C.J. and Maris, H.J., Phys. Rev. B. 54, 203 (1996).CrossRefGoogle Scholar
Handbook of Chemistry and Physics, 78th Ed. CRC Press (1997).Google Scholar
Williamson, D.L., Sol. Energ. Mat. Sol. C. 78, 41 (2003).CrossRefGoogle Scholar
Senn, W., Winterling, G., and Grimsdtch, M., in Physics of Semiconductors 1978, Ed. Wilson, B.L.H., Institute of Physics London 1979 p.709.Google Scholar
Devos, A., Foret, M., Ayrinhac, S., Emery, P., and Rufflé, B., Phys. Rev. B 77, 100201(R) (2008).CrossRefGoogle Scholar
Pohl, R.O., Liu, X., and Thompson, E., Rev. Mod. Phys. 74, 991 (2002).CrossRefGoogle Scholar
Daly, B.C., Kang, K., Wang, Y., Cahill, D.G., Phys. Rev. B 80, 174112 (2009).CrossRefGoogle Scholar
Duquesne, J.-Y. and Perrin, B., Phys. Rev. B 68, 134205 (2003).CrossRefGoogle Scholar
Akhieser, A., J. Phys. (USSR) 1, 277 (1939).Google Scholar
Maris, H. J., in Physical Acoustics, edited by Mason, W. P. and Thurston, R.N. (Academic, New York, 1971), Vol. 8.Google Scholar
Fabian, J. and Allen, P.B., Phys. Rev. Lett. 79, 1885 (1997).CrossRefGoogle Scholar
Bulgakov, A. A., Tarakanov, V. V., and Chernets, A. N., Sov. Phys. Solid State 15, 1280 (1973).Google Scholar
Gibson, J.M., Treacy, M.M.J., Sun, T., and Zaluzec, N.J., Phys. Rev. Lett. 105, 125504 (2010).CrossRefGoogle Scholar
Papadakis, E. P., J. Acoust. Soc. Am. 37, 703 (1965).CrossRefGoogle Scholar