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Towards a Quantitative Description of Pattern-dependent Planarization with Ceria Slurries

Published online by Cambridge University Press:  01 February 2011

Roland Rzehak  and
Thomas Vogel
Roland Rzehak
Affiliation:
[email protected], Qimonda Dresden, P CIW PE, Koenigsbruecker Str. 180, Dresden, 01309, Germany, +493518867982, +493518867010
Thomas Vogel
Affiliation:
[email protected], Qimonda Dresden, Koenigsbruecker Str. 180, Dresden, 01309, Germany
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Abstract

Slurries with ceria abrasives are nowadays widely used for high-end applications like STI. Concerning the pattern dependence of planarization, such slurries exhibit a much more complex behavior than conventional silica-based slurries. The situation is complicated by the fact that depending on often unknown factors like the manufacture of the ceria abrasives and additionally present additives the observed phenomena are also quite diverse. As a consequence, quantitative models are lacking and predictions of post CMP topography that could be used e.g. to derive design rules or optimize dummy fill are not available.

We here present detailed experimental results on one specific slurry system with ceria abrasives that behaves very different from conventional silica-based slurries. Possible causes for this peculiar behavior are discussed to the extent that a statement about their relevance can be made.

Keywords

CMPsimulationmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C13-05
Copyright
Copyright © Materials Research Society 2007

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References

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