Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T18:03:34.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability and Interaction Between SiOF and Cu Film

Published online by Cambridge University Press:  15 February 2011

Yu-Jane Mei ,
Ting-Chang Chang ,
Jeng-Dong Sheu ,
Wen-Kuan Yeh ,
Fu-Ming Pan  and
Chun-Yen Chang
Yu-Jane Mei
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Ting-Chang Chang
Affiliation:
National Nano Device Laboratory, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Jeng-Dong Sheu
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Wen-Kuan Yeh
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Fu-Ming Pan
Affiliation:
National Nano Device Laboratory, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Chun-Yen Chang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C.
Get access

Abstract

In this work, we study the thermal stability and interaction between SiOF and Cu. Blanket SiOF films with various F concentration were deposited by PE-CVD. A dielectric constant as low as 3.2 was obtained. Copper were deposited on these SiOF and a series of post-deposition anneal were performed. Dielectric constant of SiOF was measured after deposition and again after anneal. AES and SIMS depth profile are utilized to determine the interdiffusion between Cu and SiOF under different annealing conditions. Breakdown voltage and dielectric constant were determined form C-V and I-V measurement using a MIS ( Cu/ SiOF/ p-Si) diode. This results of leakage current measurement and flat band shift measurement suggest that the fluorine in the SiOF film will retard the cu diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 433
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. McBrayer, J. D., Swanson, R. M. and Sigmon, T. W., J. Electrochem. Soc., 133, 1242 (1986)Google Scholar
2. Broniatowski, A., Phy. Rev. Lett., 62, 3074 (1989)Google Scholar
3. Brotherton, S. D. and Ayres, J. R., J. Appl. Phys., 62, p. 1826 (1987)Google Scholar
4. Falster, R.,J.Appl. Phys. 66, p.3355(1989)Google Scholar
5. Distefano, T. H.,J. Appl. Phys. 44, p.527 (1973)Google Scholar