Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-20T06:54:34.328Z Has data issue: false hasContentIssue false
  • English
  • Français

Texturing of InP Surfaces for Device Applications

Published online by Cambridge University Press:  25 February 2011

Sheila G. Bailey ,
Navid S. Fatemi  and
Geoffrey A. Landis
Sheila G. Bailey
Affiliation:
NASA Lewis Research Center 302-1, Cleveland, OH, 44135
Navid S. Fatemi
Affiliation:
Sverdrup Technology, Inc., NASA Lewis Research Center, Brook Park, OH, 44142
Geoffrey A. Landis
Affiliation:
Sverdrup Technology, Inc., NASA Lewis Research Center, Brook Park, OH, 44142
Get access

Abstract

A unique process for texturing InP (100) wafers by anisotropic etching has been developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 341
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Haynos, J., Allison, J., Arndt, R., and Meulenberg, A., “The COMSAT Non-reflective Silicon Solar Cell,” Proc. Int. Conf. on Photovoltaic Power Generation, Sept. 1974, pp. 487–501.Google Scholar
2. Bailey, S.G., Fatemi, N., Wilt, D.M., Thomas, R.D., Landis, G.A., and Arrison, A., Conference Record of the 20th IEEE Photovoltaic Specialists Conf. (IEEE, NY, 1988), pp. 625–628.CrossRefGoogle Scholar
3. Bailey, S.G., Landis, G.A., and Wilt, D. M., J. Electrochem. Soc., Vol 136, No. 11, Nov. 1989, pp. 3444–3449.CrossRefGoogle Scholar
4. Bailey, S.G., Fatemi, N., and Faur, M., Proc. 2nd International Conf. on InP and Related Compounds, (1990), pp. 73–79.Google Scholar
5. Bailey, S.G., Fatemi, N., and Landis, G.A., Conference Record of the 22nd IEEE Photovoltaic Specialists Conf. (IEEE, NY, 1991), pp. 235–240.Google Scholar
6. Bailey, S.G., Fatemi, N.S., Landis, G.A. and Jenkins, P.P., Space Photovoltaic Research and Technology 1991 (NASA Lewis Research Center CP-3121, 1991), pp. 5-1 to 5–6.Google Scholar
7. Jenkins, P. and Landis, G.A., Proc. 3rd International Conf. on InP and Related Compounds, (1991), pp. 636–639; P. Jenkins, G.A. Landis, X. Li, D. Scheiman, N. Fatemi and S.G. Bailey, 4th International Conf. on InP and Related Compounds (1992).Google Scholar