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Texture Control and Electromigration Performance in Al-Based and Cu-Based Layered Interconnects

Published online by Cambridge University Press:  10 February 2011

Makiko Kageyama ,
Kazuhide Abe ,
Yusuke Harada  and
Hiroshi Onoda
Makiko Kageyama
Affiliation:
Oki Electric Industry Co.,Ltd.
Kazuhide Abe
Affiliation:
Oki Electric Industry Co.,Ltd.
Yusuke Harada
Affiliation:
Oki Electric Industry Co.,Ltd.
Hiroshi Onoda
Affiliation:
Oki Electric Industry Co.,Ltd.
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Abstract

Texture control of Al and Cu by underlying refractory metal is discussed. Al texture can be controlled with underlayer metals like as Ti and TiN which have the same atomic arrangement within 3% misfits to Al. Cu texture can be also controlled by underlayer TiN in spite of a large difference in inter-atomic distance of Cu and TiN. Since the epitaxial growth of TiN on Cu is observed, it is suggested that epitaxial growth may occur at the early stage of Cu deposition on TiN.

The electromigration performance was evaluated in double level interconnects with W-stud via. It is confirmed that highly <111> textured Al and Cu have high electromigration resistance. Both the diffusion of Cu in Al-Cu and Al drift are suppressed in <111> textured Al-alloy interconnects, and Cu drift is also suppressed in Cu damascene lines formed on <111> textured TiN. Grain boundary diffusion and the interfacial diffusion would be suppressed in highly textured metals with underlayer and it is speculated that interfacial diffusion is more important in Cu damascene lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 91
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Howard, J.K. and Ross, R.F., IBM Tech. Rep., 22, p.601, 1968 Google Scholar
2. Attardo, M.J. and Rosenberg, R., J.Appl. Phys. 41, pp. 2381–2386, 1970 10.1063/1.1659233Google Scholar
3. Vaidya, S. and Sinha, A.F., Thin Solid Films 75, pp.253–259, 1981 Google Scholar
4. Knorr, D.B., Tracy, D.P. and Rodbell, K.P., Appl.Phys.Lett., 59(25), pp.3241–3243, 1991 Google Scholar
5. Kageyama, M., Hashimoto, K. and Onoda, H., Proc.29th IRPS, pp.97–101, 1991 Google Scholar
6. Onoda, H., Kageyama, M. and Hashimoto, K., J.Appl.Phys., 72(2), pp.885–892, 1995 Google Scholar
7. Shibata, H., Murota, M. and Hashimoto, K., Jpn.J.Appl.Phys., 32(10), pp.4479–4484, 1993 Google Scholar
8. Toyoda, H., Kawanoue, T., Hasunuma, M., Kaneko, H. and Miyauchi, M., Poc.32th IRPS, pp. 178–184 Google Scholar
9. Hashimoto, K. and Onoda, H., Appl. Phys. Lett., 19, pp. 120–122, 1989 Google Scholar
10. Onoda, H., Narita, T., Touchi, K. and Hashimoto, K., Jap.J.Appl.Phys., pp.L1037–L1040, 1995 Google Scholar
11. Yoshida, T., Hashimoto, S., Hosokawa, H., Ohwaki, T., Mitsushima, Y. and Taga, Y., Proc.35th IRPS, pp226–233, 1997 Google Scholar
12. Kageyama, M., Tatara, Y. and Onoda, H., Jap.J.Appl.Phys. 32, pp.4649–4653, 1993 Google Scholar
13. Abe, K., Harada, Y. and Onoda, H., proc 12th VMIC, pp308–314, 1995 Google Scholar
14. Blech, I.A., J.Appl.Phys. 47(4), pp. 1203–1208, 1076Google Scholar
15. Blech, I.A., J.Appl, Phys. 48(2), pp.473–477, 1977 Google Scholar
16. Hu, C-K. and Small, M.B., J.Appl.Phys. 74(2), 969–978, 1993 Google Scholar
17. Kawasaki, H. and Hu, C-K, Proc. synp.VLSI Technology, 1996 Google Scholar
18. Abe, K., Harada, Y. and Onoda, H., Proc.36th IRPS, pp.342–347, 1998 Google Scholar
19. Hu, C-K., Lee, K.L., Gupta, D. and Blauner, P., Mat. Res.Soc.Symp. 427, pp95–106, 1996 10.1557/PROC-427-95Google Scholar