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Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices

Published online by Cambridge University Press:  11 July 2011

Chia-Han Yang ,
Yue Kuo ,
Chen-Han Lin  and
Way Kuo
Chia-Han Yang
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A. Department of Industrial and Information Engineering, University of Tennessee, Knoxville, TN 37996, U.S.A.
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Chen-Han Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Way Kuo
Affiliation:
City University of Hong Kong, Hong Kong
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Abstract

The nanocrystalline ITO embedded Zr-doped HfO2 high-k dielectric thin film has been made into MOS capacitors for nonvolatile memory studies. The devices showed large charge storage densities, large memory windows, and long charge retention times. In this paper, authors investigated the temperature effect on the charge transport and reliability of this kind of device in the range of 25°C to 125°C. The memory window increased with the increase of the temperature. The temperature influenced the trap and detrap of not only the deeply-trapped but also the loosely-trapped charges. The device lost its charge retention capability with the increase of the temperature. The Schottky emission relationship fitted the device in the positive gate voltage region. However, the Frenkel-Poole mechanism was suitable in the negative gate voltage region.

Keywords

dielectric propertiesmemorymicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q01-08
Copyright
Copyright © Materials Research Society 2011

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