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SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

Stephen P. Smith ,
Larry Wang ,
Jon W. Erickson  and
Victor K. F. Chia
Stephen P. Smith*
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Larry Wang
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Jon W. Erickson
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Victor K. F. Chia
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
*
*Corresponding Author
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Abstract

Secondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 157
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. The National Technology Roadmnap for Semicondtictors (Semiconductor Industry Association, San Jose, 1994), p. 113.Google Scholar
2. Smith, Stephen P., in Secondary Ion Mass Spectrometry (SIMS IX), edited by Benninghoven, A., Nihei, Y., Shimizu, R. and Werner, H. W. (John Wiley & Sons, Chichester, 1994) pp. 476–479.Google Scholar